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  100ma surface mount schottky barrier diode sod-80 glass case 1 of 2 features    features  mechanical data a c b dim min max a 3.30 3.70 b 1.30 1.60 c 0.28 0.50 all dimensions in mm @ t a = 25  c unless otherwise specified maximum ratings and electrical characteristics  sod-80   case:    component in accordance to rohs 2002/95/ec lead (pb)-free component this diode is also available in the do35 case with this device is protected by a pn junction this diode features low turn-on voltage for general purpose applications and high breakdown voltage guard ring against excessive voltage, such as electrostatic discharges type designation bat41 and weee 2002/96/ec weight: approx. 31 mg cathode band color: black packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 10 k/box gs08/2.5 k per 7" reel (8 mm tape), 12.5 k/box 1) valid provided that electrodes ar e kept at ambient temperature parameter test condition symbol value unit repetitive peak reverse voltage v rrm 100 v forward continuous current t amb = 25 c i f 100 1) ma repetitive peak forward current t p < 1 s, < 0.5, t amb = 25 c i frm 350 1) ma surge forward current t p = 10 ms, t amb 25 c i fsm 750 1) ma power dissipation t amb = 65 c p tot 200 1) mw 2) pulse test, t p = 300 s parameter test condition symbol min ty p. max unit reverse breakdown voltage 2) i r = 100 a v (br) 100 110 v leakage current 2) v r = 50 v, t j = 25 c i r 100 na v r = 50 v, t j = 100 c i r 20 a forward voltage 2) i f = 1 ma v f 400 450 mv i f = 200 ma v f 1000 mv diode capacitance v r = 1 v, f = 1 mhz c d 2pf LL41
2 of 2 figure 1. admissible power dissi pation vs. ambient temperature 20225 t am b - am b ient temperat u re (c) p - po w er dissipation (m w ) tot 0 50 100 150 200 250 0 50 100 150 figure 2. typical reverse characteristics 100000 10000 1000 100 10 1 20226 v r - re v erse v oltage ( v ) i - re v erse leakage c u rrent (na) r 0 10203040506070 8 0 90 100 25 c t = 125 c 100 c 75 c 50 c j figure 3. typical forward characteristics 0.01 0.1 100 10 1 1000 0 400 600 8 00 1000 1200 200 i- for w ard c u rrent (ma) f v f - for w ard v oltage (m v ) 1 8 641 t j = 125 c c 25 - 40 c figure 4. typical capacit ance vs. reverse voltage 20227 10 20 30 40 0 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 c - diode capacitance (pf) d v r - re v erse v oltage ( v ) 1.0 0.5 0 15 25 35 5


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